Probing Impurity Migration Effects in Si-Doped AlGaAs by Terahertz Spectroscopy
Dept. of Physics, Kansas State Univ., USA
William Goodhue, Vinod Menon, William Gorveatt, Robert Giles, Jerry Waldman
Dept. of Physics, Univ. of Massachusetts, USA.
Using terahertz magneto-photoconductive spectroscopy, we investigate impurity migration effects in barrier-doped GaAs/AlGaAs quantum wells. A new segregation decay rate for Si impurities in AlGaAs is determined for samples fabricated at low epitaxial growth temperature.
This work was supported by the Chemical Sciences, Geosciences and Biosciences Division,
Office of Basic Energy Sciences, Office of Science, U.S. Department of Energy, and by
the National Science Foundation.
Submitted to CLEO/QELS, May 2006 in Long Beach, CA.
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