Stark-induced X-ray emission from high Rydberg states of H-like and He-like Silicon

M.A. Gearba, R.A. Komara, S.R. Lundeen
(Dept. of Physics, Colorado State University),

W.G. Sturrus
(Dept. of Physics, Youngstown State University)

C.W. Fehrenbach, X. Flechard, B.D. DePaola
(Dept. of Physics, Kansas State University)

Highly excited Rydberg states of H-like or He-like Silicon are formed when Si¹⁴⁺ or Si¹³⁺ ions capture a single electron from an n=10 Rydberg target. Based on study of the capture process [1] it is expected that a few n's around n=76 or 72 respectively will be formed in the two cases. When these Rydberg ions are subjected to a weak external electric field (E ~ 20 V/cm), an enhanced rate of decay directly to the 1S ground state results as long lived high-L states are mixed with the rapidly decaying P states. The yield of these nP-1S X-rays approaches a limit when the external field is sufficient to fully Stark mix the Rydberg manifolds and and this limiting yield can be used to deduce the fraction of Rydberg ions which are formed in states of low-m (-1,0,1). Measured values of this yield confirm predictions of a large low-m fraction in ion-Rydberg charge transfer.

References:

[1] D.S. Fisher, et. al. Phys. Rev. A 63, 052712 (2001)

This work was supported by the Chemical Sciences, Geosciences and Biosciences Division,
Office of Basic Energy Sciences, Office of Science, U.S. Department of Energy.

Submitted to DAMOP 2002, May 2002 in Williamsburg, VA.

 

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