Direct measurement of high-L fine structure intervals in Si III, n=29

R.A. Komara, M.A. Gearba, S.R. Lundeen
(Dept. of Physics, Colorado State University)

C.W. Fehrenbach, B.D. DePaola
(Dept. of Physics, Kansas State University)

We will report observations of direct rf-induced transitions between high-L, n=29 Rydberg states of Si²⁺. A sample of highly excited ions is created by capture of a single electron from an n=10 Rydberg target by a beam of Si³⁺ ions obtained from an ECR source [1]. Individual fine structure levels in the n=29 manifold of Si²⁺ are selectively detected using Doppler-tuned CO₂ laser excitation from 29-90, followed by Stark ionization of the n=90 products. The Stark-ionization rate is proportional to the population of the individual L level which is selectively excited by the laser, and can be used to detect RF-induced transitions from that level to neighboring levels. A set of these measurements, determining the n=29 fine structure pattern, can be used to deduce that dipole polarizability of the ground state of Si³⁺, Na-like Silicon.

References:

[1] S.R. Lundeen, et. al. Phys. Rev. A 64, 052714 (2001)

This work was supported by the Chemical Sciences, Geosciences and Biosciences Division,
Office of Basic Energy Sciences, Office of Science, U.S. Department of Energy.

Submitted to DAMOP 2002, May 2002 in Williamsburg, VA.

 

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